The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Aug. 19, 2020
Applicant:

Sinovia Technologies, San Carlos, CA (US);

Inventors:

George Burkhard, Redwood City, CA (US);

Daniel Slotcavage, Menlo Park, CA (US);

Assignee:

Sinovia Technologies, San Carlos, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 71/40 (2023.01); H10K 50/11 (2023.01); H10K 50/125 (2023.01); H10K 50/15 (2023.01); H10K 50/17 (2023.01); H10K 71/00 (2023.01); H10K 71/60 (2023.01); H10K 50/81 (2023.01); H10K 50/82 (2023.01);
U.S. Cl.
CPC ...
H10K 71/00 (2023.02); H10K 50/125 (2023.02); H10K 50/15 (2023.02); H10K 50/171 (2023.02); H10K 71/441 (2023.02); H10K 71/611 (2023.02); H10K 50/11 (2023.02); H10K 50/81 (2023.02); H10K 50/82 (2023.02);
Abstract

A method of flash-curing a respective layer in an electronic device stack is provided. The method includes providing a stack of layers including a substrate and one or more electronically-active layers disposed on a surface of the substrate. The method further includes applying, over the stack of layers, a thermally-curable layer of material that includes a polymer or polymerizable material. The method further includes performing a non-equilibrium thermal process that includes raising a temperature of the thermally-curable layer of material, including the polymer or polymerizable material, above a first temperature for a length of time sufficient to cure the thermally-curable layer of material while maintaining the stack of layers below a second temperature that is less than the first temperature. The stack of layers is robust to temperatures below the second temperature.


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