The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Nov. 30, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Youngtek Oh, Suwon-si, KR;
Hyeyoung Kwon, Hwaseong-si, KR;
Taein Kim, Seoul, KR;
Gukhyon Yon, Hwaseong-si, KR;
Minhyun Lee, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02);
Abstract
A nonvolatile memory device includes a channel layer, a plurality of gate electrodes and a plurality of separation layers spaced apart from the channel layer and alternately arranged, a charge trap layer between the gate electrodes in the channel layer, and a charge blocking layer between the charge trap layer and the gate electrode.