The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Apr. 13, 2022
SK Hynix Inc., Gyeonggi-do, KR;
Yoon Jae Nam, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate including an active region defined by an isolation layer; a buried gate structure provided in a trench formed in the substrate; and a first doped region and a second doped region formed in the active region and separated by the trench, wherein the buried gate structure includes a gate dielectric layer conformally covering the trench; and a gate electrode including a first portion partially filling the trench on the gate dielectric layer and a second portion formed on the first portion, wherein the second portion includes a material included in the first portion and dopants including phosphorous (P), germanium (Ge), or a combination thereof, and wherein the first portion does not laterally overlap with the doped region and the second doped region, and all or a part of the second portion laterally overlaps with the first doped region and the second doped region.