The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Dec. 01, 2021
Trumpf Photonic Components Gmbh, Ulm, DE;
Ulrich Weichmann, Aachen, DE;
Philipp Henning Gerlach, Ulm, DE;
Susanne Weidenfeld, Weilheim, DE;
Holger Joachim Moench, Vaals, NL;
TRUMPF PHOTONIC COMPONENTS GMBH, Ulm, DE;
Abstract
A vertical cavity surface emitting laser device includes: an optical resonator; a photodiode; and a contact arrangement. The optical resonator includes: two distributed Bragg reflectors (DBRs) and an active region between the DBRs. The photodiode has a light absorption region in the optical resonator. The contact arrangement provides drive current to pump the optical resonator, and contacts the photodiode. The active region has an InGaAs layer, where 0≤x<1. The light absorption region has an InGaAs layer, where 0<y<1, and y>x. The InGaAs layer is an intrinsic layer of the light absorption region. The InGaAs layer is 15-50 nm thick. The light absorption region has an undoped layer with a material different from the InGaAs layer. The InGaAs layer is immediately adjacent to the undoped layer. An intrinsic zone of the light absorption region is at least 70 nm thick.