The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Feb. 28, 2022
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Masanori Miyata, Kariya, JP;

Yuuma Kagata, Kariya, JP;

Yuki Yakushigawa, Seto, JP;

Masaru Senoo, Okazaki, JP;

Hiroshi Hosokawa, Nagoya, JP;

Takaya Nagai, Toyota, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 29/1095 (2013.01); H01L 29/861 (2013.01);
Abstract

A semiconductor device includes an IGBT region in which an IGBT element is formed and an FWD region in which an FWD element is formed. The IGBT region includes a first region and a second region different from the first region. The FWD region and the first region of the IGBT region have a carrier extraction portion that facilitates extraction of carriers injected from a second electrode compared to the second region when a forward bias for causing the FWD element to operate as a diode is applied between a first electrode and the second electrode.


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