The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Nov. 15, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taeyoung Song, Hwaseong-si, KR;

Sung In Kim, Hwaseong-si, KR;

Haesung Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/778 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/14603 (2013.01); H01L 27/1463 (2013.01); H04N 25/778 (2023.01);
Abstract

An image sensor includes: a first device isolation part in a substrate and defining an active region; a first gate electrode having a first and second gate sidewalls; and a first impurity region and a second impurity region adjacent to the first and second gate sidewalls, wherein the active region includes: a first active central part; a first active protrusion; and a second active protrusion, wherein the first device isolation part has a first isolation sidewall overlapping the first active central part, and wherein a first straight line is at least partially spaced apart from the first isolation sidewall, wherein the first straight line links a first point, at which the first active protrusion meets the first active central part, to a second point, at which the second active protrusion meets the first active central part.


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