The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Dec. 02, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Xu Li, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01); G11C 16/30 (2006.01); G11C 16/32 (2006.01); G11C 16/34 (2006.01); H10B 69/00 (2023.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/30 (2013.01); G11C 16/32 (2013.01); G11C 16/3427 (2013.01); G11C 16/24 (2013.01); H10B 69/00 (2023.02);
Abstract

A semiconductor memory device includes a memory cell array, a well voltage control circuit, and a source voltage control circuit. Before writing data, first and second transistors respectively connected to a select gate line and a word line are turned on at a first timing, and a ground voltage is applied to the first transistor at a second timing and to the second transistor at a third timing. The source voltage control circuit applies a first voltage to the source line at a fourth timing that is simultaneous with or after the first timing and before the second timing, and the well voltage control circuit applies the first voltage to the well region at a fifth timing that is simultaneous with or after the first timing and before the second timing, and applies a ground voltage to the well region at a sixth timing that is after the fifth timing.


Find Patent Forward Citations

Li, Xu. (2025). Semiconductor memory device (U.S. Patent No. 12190953). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12190953

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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