The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Oct. 21, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Younghyun Kim, Seoul, KR;
Sechung Oh, Yongin-si, KR;
Heeju Shin, Seoul, KR;
Jaehoon Kim, Seoul, KR;
Sanghwan Park, Suwon-si, KR;
Junghwan Park, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A magnetoresistive random access memory device includes a pinned layer; a tunnel barrier layer on the pinned layer; a free layer structure on the tunnel barrier layer, the free layer structure including a plurality of magnetic layers and a plurality of metal insertion layers between the magnetic layers; and an upper oxide layer on the free layer structure, wherein each of the metal insertion layers includes a non-magnetic metal material doped with a magnetic material, and the metal insertion layers are spaced apart from each other.