The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Nov. 27, 2020
Applicant:
University of Southampton, Southampton, GB;
Inventors:
David Thomson, Southampton, GB;
Graham Reed, Southampton, GB;
Weiwei Zhang, Southampton, GB;
Martin Ebert, Southampton, GB;
Assignee:
University of Southampton, , GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02B 6/13 (2006.01); G02B 6/132 (2006.01); G02B 6/136 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1228 (2013.01); G02B 6/131 (2013.01); G02B 6/132 (2013.01); G02B 6/136 (2013.01); G02B 2006/12176 (2013.01);
Abstract
A method of manufacturing a photonic chip. The method comprises providing a wafer comprising a silicon substrate, and a low refractive index layer above the silicon substrate, forming a first trench having a first height and a second trench having a second height by etching the low refractive index layer. The second height is greater than the first height and the second trench has a bottom surface that is closer to the substrate than a bottom surface of the first trench.