The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Mar. 11, 2022
Imec Vzw, Leuven, BE;
David Barge, Schaerbeek, BE;
Bert Du Bois, Blanden, BE;
Simone Severi, Leuven, BE;
Ashesh Ray Chaudhuri, Heverlee, BE;
IMEC VZW, Leuven, BE;
Abstract
A method for forming a nanopore transistor and a nanopore transistor is provided. The method includes: (a) forming an aperture in a filler material by: (i) providing a fin comprising a semiconductor layer and a top layer; (ii) patterning the top layer to form a pillar; (iii) embedding the pillar in a filler material; (iv) removing the pillar, leaving an aperture; (v) lining the aperture with a spacer material; (b) forming a nanopore by etching through the aperture; (b) lining the nanopore with a dielectric, (c) forming a source and a drain by either: between steps a.ii and a.iii, doping the bottom semiconductor layer by using the pillar as a mask, or after step c, filling the aperture with a sealing material, thereby forming a post; removing the filler material; doping the bottom semiconductor layer by using the post as a mask; and removing the sealing material.