The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Jun. 04, 2019
Peking University, Beijing, CN;
Kaihui Liu, Beijing, CN;
Zhibin Zhang, Beijing, CN;
Muhong Wu, Beijing, CN;
Dapeng Yu, Beijing, CN;
Enge Wang, Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
A method for clonal-growth of a single-crystal metal, including: using copper as an example, placing an existing small-sized single-crystal copper foil with a plane of any index on a copper foil that needs to be single-crystallized, and performing annealing to obtain, by cloning, a large-area (in meters) single-crystal copper foil with the same surface index as that of the parent facet. The method solves the difficult problem of large-area single-crystal copper foil preparation. By performing annealing, a parent single-crystal copper foil with a very small size (˜0.25 cm) can be cloned to produce a large-area (˜700 cm) single-crystal copper foil, which is an increase in area of about 3000 times.