The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jun. 24, 2021
Applicant:

Ceres Intellectual Property Company Limited, Horsham, GB;

Inventors:

Robert Leah, Horsham, GB;

Mike Lankin, Horsham, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 18/12 (2006.01); C25B 13/07 (2021.01); H01M 8/12 (2016.01); H01M 8/1253 (2016.01);
U.S. Cl.
CPC ...
C23C 18/1216 (2013.01); C23C 18/1241 (2013.01); C23C 18/1295 (2013.01); H01M 8/1253 (2013.01); C25B 13/07 (2021.01); H01M 2008/1293 (2013.01); H01M 2300/0077 (2013.01);
Abstract

A method of manufacturing a layer of crystalline ytterbium doped zirconia on a substrate is disclosed. The method includes depositing a solution including precursor metal salts of the ytterbium doped zirconia onto a surface of the substrate, wherein the surface is a metallic or a ceramic surface. The solution is dried to form a film of the precursor metal salts on the surface. The film of the precursor metal salts is heated to decompose it to form an ytterbium doped zirconia. The previous steps may optionally be repeated. The film(s) are fired in order to form the layer of crystalline ytterbium doped zirconia. The ytterbium doped zirconia has a formula:([YbM]O)(ZrO)wherein M is a metallic dopant ion; z is in the range of 0.03 to 0.13; and x is in the range of 0.05 to 1.


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