The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Mar. 03, 2023
Applicant:
Sitime Corporation, Santa Clara, CA (US);
Inventors:
Michael Julian Daneman, Campbell, CA (US);
Charles I. Grosjean, Los Gatos, CA (US);
Paul M. Hagelin, Saratoga, CA (US);
Assignee:
SiTime Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00293 (2013.01); B81B 7/0041 (2013.01); B81B 2201/0271 (2013.01); B81B 2201/032 (2013.01); B81C 2203/0145 (2013.01);
Abstract
A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.