The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Mar. 10, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonjun Park, Suwon-si, KR;

Chungman Kim, Suwon-si, KR;

Dongho Ahn, Suwon-si, KR;

Changyup Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8828 (2023.02); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02);
Abstract

A variable resistance memory device includes a first conductive line extending on a substrate in a first horizontal direction; a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction; and a memory cell at an intersection between the first conductive line and the second conductive line, the memory cell including a selection element and a variable resistor, wherein the variable resistor includes a first variable resistance layer having a senary component represented by CGeSbTeAX, in which A and X are each a group 13 element different from each other, and 1≤a≤18, 13≤b≤26, 15≤c≤30, 35≤d≤55, 0.1≤e≤8, 0.1≤f≤8, and a+b+c+d+e+f=100.


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