The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Mar. 07, 2022
Applicant:

Northwestern University, Evanston, IL (US);

Inventors:

Hooman Mohseni, Wilmette, IL (US);

Simone Bianconi, Evanston, IL (US);

Assignee:

Northwestern University, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); H10N 70/011 (2023.02); H10N 70/883 (2023.02);
Abstract

Memristor devices are provided. In an embodiment, a memristor device comprises a top electrode; a bottom electrode; a dielectric material between the top and bottom electrodes; and an ion-implanted conductive region embedded within the dielectric material, the ion-implanted conductive region comprising the dielectric material. The ion-implanted conductive region forms an interface with the dielectric material such that a voltage applied across the top and bottom electrodes causes electrons to cross the interface as they move between the top and bottom electrodes so that the memristor device exhibits memristance.


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