The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Dec. 28, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Li-Wen Hung, Mahopac, NY (US);

Elbert Emin Huang, Mountain View, CA (US);

Harry Jonathon Mamin, Palo Alto, CA (US);

Daniel Rugar, Los Altos, CA (US);

Martin O. Sandberg, Ossining, NY (US);

Joseph Finley, Rye Brook, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 49/02 (2006.01); H10N 60/01 (2023.01); H10N 60/12 (2023.01); H10N 69/00 (2023.01);
U.S. Cl.
CPC ...
H10N 69/00 (2023.02); H01L 23/481 (2013.01); H01L 28/90 (2013.01); H10N 60/0912 (2023.02); H10N 60/12 (2023.02);
Abstract

One or more systems, devices, methods of use and/or methods of fabrication provided herein relate to a superconducting device that can be operated with minimal electric field energy coupling at surface layers of the superconducting device and/or that can have a small footprint. According to one embodiment, a device can comprise a Josephson junction located between a first capacitor portion and a second capacitor portion of a capacitor, wherein at least a trenched section of the first capacitor portion is located beneath a surface of a substrate, and wherein at least a trenched section of the second capacitor portion is located beneath the surface of the substrate. According to another embodiment, a device can comprise a capacitor disposed within a substrate layer and the capacitor comprising a pair of material-filled trenches in the substrate layer, and a Josephson junction coupled to the capacitor.


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