The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
May. 11, 2022
Semiconductor devices comprising crack preventing layers and data storage systems including the same
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sanghun Chun, Suwon-si, KR;
Kwangyoung Jung, Hwaseong-si, KR;
Youngji Noh, Suwon-si, KR;
Junghwan Park, Seongnam-si, KR;
Jeehoon Han, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, channel structures penetrating the gate electrodes, extending in the first direction, and each including a channel layer, separation regions penetrating the gate electrodes, extending in the first direction and a second direction perpendicular to the first direction, and spaced apart from each other in a third direction perpendicular to the first direction and the second direction, and crack prevention layers disposed on at least a portion of the separation regions, wherein each of the separation regions includes a lower region and upper regions spaced apart from each other in the second direction on the lower region and protruding upwardly from the lower region, and wherein the crack prevention layers are in contact with upper surfaces of the upper regions.