The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Oct. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minjun Choi, Hwaseong-si, KR;
Myunglae Chu, Hwaseong-si, KR;
Seoksan Kim, Suwon-si, KR;
Minwoong Seo, Hwaseong-si, KR;
Jiyoun Song, Seoul, KR;
Hyunyong Jung, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.