The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Mar. 08, 2022
Applicant:
Richwave Technology Corp., Taipei, TW;
Inventors:
Yu-Siang Huang, Taipei, TW;
Chih-Sheng Chen, Taipei, TW;
Assignee:
RichWave Technology Corp., Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/16 (2006.01); H04B 1/18 (2006.01); H04B 1/44 (2006.01);
U.S. Cl.
CPC ...
H04B 1/1615 (2013.01); H04B 1/18 (2013.01); H04B 1/44 (2013.01);
Abstract
A radio frequency (RF) switch includes a signal terminal, a reference voltage terminal and a shunt switch path. The shunt switch path includes a first sub-shunt circuit and a second sub-shunt circuit. The second sub-shunt circuit includes a first transistor and a second transistor coupled in parallel. When switched to a first state, the RF switch has first impedance; when switched to a second state, the RF switch has second impedance; and when switched to a third state, the RF switch has third impedance. The first impedance, the second impedance, and the third impedance are different.