The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jul. 26, 2023
Innovision Semiconductor Inc., Dongguan, CN;
Innovision Semiconductor Inc., Dongguan, CN;
Abstract
A gate drive circuit for a power semiconductor device, a low-side switching circuit, a high-side switching circuit, and a drive method are disclosed. When a first gate driver receives a control signal which is at a first level, the first gate driver connects a first gate to a first voltage, so that the first gate controls a channel region. When the transistor operates on a Miller plateau, the area of an overlapping region between the first gate and a drain inside the transistor is relatively small, so the Miller capacitance of the transistor is relatively small, thereby improving the switching speed of the transistor. A second gate is connected to a second voltage after a first duration, so that the second gate controls a drift region of the transistor to form an accumulation layer, and the accumulation layer has a relatively high carrier concentration.