The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Sep. 03, 2021
Applicant:
University of Oregon, Eugene, OR (US);
Inventors:
Ignas Lekavicius, Eugene, OR (US);
Hailin Wang, Eugene, OR (US);
Assignee:
University of Oregon, Eugene, OR (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02055 (2013.01); G03F 7/0042 (2013.01); G03F 7/2035 (2013.01);
Abstract
A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 μm and 250 μm. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 μm to less than 1 μm. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.