The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Jun. 28, 2023
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Soshiro Nishioka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 5/36 (2006.01);
U.S. Cl.
CPC ...
H03B 5/364 (2013.01);
Abstract

A semiconductor device includes a crystal oscillator circuit, a first noise application circuit, and a second noise application circuit. The first noise application circuit is connected to the crystal oscillator circuit and is configured to drive a crystal resonator by selectively applying initial noises of opposite phases to a first external terminal and a second external terminal. The second noise application circuit applies a second noise to the first external terminal by amplifying a signal at the first external terminal and returning the amplified signal to the first external terminal, thereby driving an oscillation amplifier and a crystal resonator of the crystal oscillator circuit and shortening a start-up time of the crystal oscillator circuit.


Find Patent Forward Citations

Nishioka, Soshiro. (2024). Semiconductor device (U.S. Patent No. 12184234). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12184234

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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