The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Jan. 28, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jie Huang, Beijing, CN;

Jiayu He, Beijing, CN;

Ce Ning, Beijing, CN;

Zhengliang Li, Beijing, CN;

Hehe Hu, Beijing, CN;

Fengjuan Liu, Beijing, CN;

Nianqi Yao, Beijing, CN;

Kun Zhao, Beijing, CN;

Tianmin Zhou, Beijing, CN;

Jiushi Wang, Beijing, CN;

Zhongpeng Tian, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 27/1225 (2013.01); H01L 27/127 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G02F 1/1368 (2013.01);
Abstract

The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.


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