The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jun. 14, 2021
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Yang-Kyu Choi, Daejeon, KR;
Joon-Kyu Han, Daejeon, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Abstract
Disclosed is a single transistor with a double gate structure for an adjustable firing threshold voltage and a neuromorphic system using the same. A single transistor neuron with a double gate structure according to an example embodiment includes a barrier material layer formed on a semiconductor substrate and comprising a hole barrier material or an electron barrier material; a floating body layer formed on the barrier material layer; a source and a drain formed at both sides of the floating body layer, respectively; a driving gate formed at a first side of the floating body layer without contacting the source and the drain; a control gate formed at a second side of the floating body layer without contacting the source and the drain; and a gate insulating film formed between the floating body layer and the driving gate and between the floating body layer and the control gate.