The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Mar. 05, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kentaro Ichinoseki, Nonoichi Ishikawa, JP;
Tsuyoshi Kachi, Kanazawa Ishikawa, JP;
Kohei Oasa, Setagaya Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes first and second electrodes, first to third semiconductor regions, first and second conductive parts, a first conductive region, a first electrode region, and a conductive layer. The first-conductivity-type third semiconductor region is on the second-conductivity-type second semiconductor region, which is on a portion of the first-conductivity-type first semiconductor region, which is on and electrically connected to the first electrode. A portion of the first conductive part faces the second semiconductor region side surface. A portion of the second conductive part faces the first semiconductor region side surface. The second electrode is on and electrically connected to the second and third semiconductor regions. The first electrode region is electrically connected to the first conductive region, which is on and electrically connected to the second conductive part. The conductive layer is electrically connected to the second electrode and to the first conductive and/or first electrode region.