The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Aug. 06, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Qintao Zhang, Mt Kisco, NY (US);
Samphy Hong, Saratoga Springs, NY (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/16 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 29/1608 (2013.01); H01L 29/401 (2013.01);
Abstract
Methods may include providing a device structure having a shielding layer formed beneath each trench in a MOSFET to protect trench corner breakdown. The method may include providing a device structure comprising an epitaxial layer, a well over the epitaxial layer, and a source layer over the well, and providing a plurality of trenches through the device structure. The method may further include forming a shielding layer in the device structure by directing ions into the plurality of trenches.