The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Dec. 28, 2023
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Takeyoshi Komoto, Osaka, JP;

Masahiko Nakamizo, Kanagawa, JP;

Toshiaki Ono, Kanagawa, JP;

Tomonori Yamashita, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/522 (2006.01); H04N 25/75 (2023.01); H04N 25/79 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 23/5225 (2013.01); H01L 27/14634 (2013.01); H01L 27/14645 (2013.01); H04N 25/75 (2023.01); H04N 25/79 (2023.01);
Abstract

An imaging device of an embodiment has a first substrate, a second substrate, a wire, and a trench. The first substrate has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode. The second substrate has a pixel circuit that reads a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The wire penetrates the first substrate and the second substrate in a stacking direction, and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate. The trench is formed at least in the second substrate, runs in parallel with the wire, and has a depth equal to or greater than the thickness of a semiconductor layer in the second substrate.


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