The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Apr. 02, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seunghyun Song, Albany, NY (US);

Seungyoung Lee, Albany, NY (US);

Saehan Park, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/822 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 29/423 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/8221 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 27/0688 (2013.01); H01L 29/4238 (2013.01); H01L 29/42392 (2013.01); H10B 10/125 (2023.02);
Abstract

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a cross-coupled gate circuit in a three-dimensional (3D) stack including a plurality of transistors, a first gate line of a first transistor among the plurality of transistors connected to a fourth gate line of a fourth transistor among the plurality of transistors, a second gate line of a second transistor among the plurality of transistors connected to a third gate line of a third transistor among the plurality of transistors, a first conductor connecting the first gate line and the fourth gate line, a second conductor connecting the second gate line and the third gate line. The first gate line and the second gate line are arranged above the third gate line and the fourth gate line, respectively.


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