The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Dec. 09, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Ting-Cih Kang, New Taipei, TW;
Hsih-Yang Chiu, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 2224/02215 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05561 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/08146 (2013.01); H01L 2225/06541 (2013.01);
Abstract
The present disclosure provides a method for manufacturing a semiconductor structure employing a via structure. The method includes forming a first conductive pad on a first semiconductor device; forming a second conductive pad on the first conductive pad; connecting a second semiconductor device to the first semiconductor device; and forming a via structure in the second semiconductor device, The via structure contacts the second conductive pad, and the first conductive pad and the second conductive pad are formed of different metal materials.