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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12183661 B1

PDFFull Text
Date of Patent:
Dec. 31, 2024

Filed:

Jun. 26, 2023

Through electrode substrate and semiconductor device

Applicant:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Inventor:

Satoru Kuramochi, Tokyo, JP;

Assignee:

DAI NIPPON PRINTING CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Niki H Nguyen

Int. Cl.
CPC ...
H01L 23/48 (2006.01); B23K 26/382 (2014.01); C03C 17/36 (2006.01); C03C 17/40 (2006.01); C03C 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/32 (2006.01); H01L 23/498 (2006.01); H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 29/40 (2006.01); C03C 15/00 (2006.01); H01L 23/00 (2006.01); H01L 23/15 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); B23K 26/382 (2015.10); C03C 17/3671 (2013.01); C03C 17/40 (2013.01); C03C 23/0025 (2013.01); H01L 21/76873 (2013.01); H01L 23/32 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/5329 (2013.01); C03C 15/00 (2013.01); H01L 23/15 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01);
Abstract

A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0° or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.

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