The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Mar. 09, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ashim Dutta, Clifton Park, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Jennifer Church, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/76865 (2013.01); H01L 23/5283 (2013.01); H01L 21/76801 (2013.01); H01L 21/76843 (2013.01); H01L 23/53209 (2013.01); H01L 23/53266 (2013.01);
Abstract

A semiconductor substrate has a metal via in the substrate, and has, on the substrate, a metal line that is less than 8 nanometers (nm) wide and at least 20 nm tall. A method for making a semiconductor structure includes forming a metal via in a substrate; forming a mandrel atop and offset from the via; depositing a metal-containing liner onto the mandrel; exposing the top of the mandrel by anisotropically etching the liner, thereby defining a separate portion of the liner at each side of the mandrel; and growing a metal line on each portion of the liner.


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