The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Aug. 28, 2019
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventor:

Takuma Yamamoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/22 (2006.01); G03F 7/00 (2006.01); H01J 37/244 (2006.01); H01J 37/26 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); G03F 7/70633 (2013.01); H01J 37/222 (2013.01); H01J 37/244 (2013.01); H01J 37/265 (2013.01); H01J 2237/24475 (2013.01); H01J 2237/2448 (2013.01); H01J 2237/2817 (2013.01);
Abstract

In the present invention, an overlay misalignment is quickly measured. An image generation unit generates an image on the basis of signals from a detector. A matching processing unit identifies, by means of matching processing with a template image, the position of an overlay measurement pattern in the image generated by the image generation unit. A line profile generation unit generates, by scanning the overlay pattern, a first line profile pertaining to a secondary electron signal and a second line profile pertaining to a backscattered electron signal. An overlay misalignment measurement unit identifies the position of a first pattern in the overlay measurement pattern from the first line profile, identifies the position of a second pattern in the overlay measurement pattern from the second line profile, and measures an overlay misalignment in a sample on the basis of the position of the first pattern and the position of the second pattern.


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