The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Dec. 11, 2021
Applicant:
Ningbo Aura Semiconductor Co., Limited, Ningbo, CN;
Inventors:
Arnold J D'Souza, Bangalore, IN;
Shyam Somayajula, Bangalore, IN;
Assignee:
Ningbo Aura Semiconductor Co., Ltd., Zhejiang, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01); G11C 17/16 (2006.01); H01Q 1/24 (2006.01); H02M 1/00 (2007.01); H02M 3/07 (2006.01); H04B 1/40 (2015.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 17/16 (2013.01); H02M 1/0045 (2021.05); H02M 3/07 (2013.01); H04B 1/40 (2013.01); H01Q 1/246 (2013.01);
Abstract
Operating a memory unit using a low-power DC source. The low-power DC source provides lesser power than that required to operate the memory unit. In an embodiment, charge from the low-power source is stored on a charge storage device in a first time interval. The memory unit is operated using the charge storage device as a second power source in a second time interval. A portion of one of the first time interval and the second time interval does not overlap with the other one of the first time interval and the second time interval.