The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Jun. 13, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Manabu Sato, Chigasaki, JP;

Yoshikazu Harada, Kawasaki, JP;

Naoya Shimmyo, Yokohama, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4096 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3418 (2013.01); G11C 16/3436 (2013.01); G11C 16/3459 (2013.01); G11C 16/32 (2013.01);
Abstract

A semiconductor storage device of an embodiment includes: a plurality of memory strings each including a plurality of memory cell transistors, the plurality of memory strings being connected in parallel to one another; and a control circuit configured to control a write operation on at least part of the plurality of memory cell transistors. The write operation is executed in response to reception of the write command and the address. The control circuit determines, based on the address, whether to perform a first voltage application operation before the write operation ends. The first voltage application operation applies a predetermined voltage to the plurality of word lines.


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