The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Sep. 13, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Byungchul Jeon, Seongnam-si, KR;

Jae Min Kim, Suwon-si, KR;

Hyunseok Kim, Gwacheon-si, KR;

Junho Huh, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/00 (2006.01); G06F 1/3287 (2019.01); G06F 1/3296 (2019.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
G06F 1/3287 (2013.01); G06F 1/3296 (2013.01); H03K 17/6871 (2013.01);
Abstract

A system on chip (SoC) includes a first core and a second core, first and second power gating switches, and a first power switch. The first power gating switch is arranged between the first core and a first power rail that receives a first voltage, and is selectively turned on in response to a first power gating signal. The second power gating switch is arranged between the second core and a second power rail that receives a second voltage, and is selectively turned on in response to a second power gating signal. The first power switch is arranged between the first power rail and the second power rail, and is selectively turned on in response to a first power control signal to connect the first power gating switch or the second power gating switch both the first power rail and the second power rail.


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