The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Nov. 14, 2022
The Institute of Optics and Electronics, the Chinese Academy of Sciences, Sichuan, CN;
Xiangang Luo, Sichuan, CN;
Kaipeng Liu, Sichuan, CN;
Yunfei Luo, Sichuan, CN;
Shuai Mou, Sichuan, CN;
Ping Gao, Sichuan, CN;
Zeyu Zhao, Sichuan, CN;
Abstract
A photolithography method includes: sequentially preparing a functional film layer, a reflective auxiliary imaging film layer and a first photoresist layer which are stacked, on a photolithography substrate; performing photolithography on the first photoresist layer to obtain a first photolithography structure; etching the reflective auxiliary imaging film layer with the first photolithography structure as a masking layer; on the pattern of the reflective auxiliary imaging film layer, sequentially preparing a second photoresist layer and a transmissive auxiliary imaging film layer which stacked; performing surface plasmon photolithography with the pattern of the reflective auxiliary imaging film layer as a mask, removing the transmissive auxiliary imaging film layer, and then developing the second photoresist layer, to obtain a second photolithography structure; and etching the functional film layer, with the second photolithography structure as a masking layer, to obtain a third photolithography structure.