The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Nov. 22, 2021
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Hiromasa Tsuboi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/131 (2023.02);
Abstract

An apparatus includes a pixel that includes a current path including a light emitting element and a first transistor, a second transistor, and a third transistor connected to a signal wire. One of source and drain regions of the second transistor is connected to one node of the light emitting element and a first power supply. One of source and drain regions of the third transistor is connected to a gate electrode of the first transistor. An isolation portion is disposed between a first conductivity type first diffusion region that makes up one of the source and drain regions of the second transistor and a first conductivity type second diffusion region that makes up one of the source and drain regions of the third transistor. A depth of the first diffusion region is greater than a depth of the second diffusion region.


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