The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Oct. 13, 2021
Applicants:

Japan Display Inc., Tokyo, JP;

The University of Tokyo, Tokyo, JP;

Inventors:

Takashi Nakamura, Tokyo, JP;

Makoto Uchida, Tokyo, JP;

Masahiro Tada, Tokyo, JP;

Marina Mochizuki, Tokyo, JP;

Hirofumi Kato, Tokyo, JP;

Akio Takimoto, Tokyo, JP;

Takao Someya, Tokyo, JP;

Tomoyuki Yokota, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10K 39/32 (2023.01); A61B 5/021 (2006.01); G06V 40/13 (2022.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H01L 29/78645 (2013.01); A61B 5/02108 (2013.01); G06V 40/1306 (2022.01); G06V 40/1318 (2022.01);
Abstract

A detection device includes a photodiode, and a thin-film transistor coupled to the photodiode. The thin-film transistor includes a semiconductor layer between a light-blocking layer and the photodiode, and an electrode layer between the semiconductor layer and the photodiode, and the electric layer includes a source electrode and a drain electrode of the thin-film transistor. The source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween.


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