The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Dec. 16, 2021
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Yoshinobu Yamagami, Kanagawa, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10B 10/125 (2023.02); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01);
Abstract
Static Random Access Memory (SRAM) cell using Complementary FET (CFET) includes the first to sixth transistors each of which is a three-dimensional transistor. The first to fourth transistors are formed at the same position as each other in the first direction in which channel portions of the first to sixth transistors extend. The fifth transistor having a node connected to the first bit line and the sixth transistor having a node connected to the second bit line are formed at the same position in the first direction as each other.