The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Nov. 13, 2023
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Tuli Luthuli Dake, Plano, TX (US);

Satish Kumar Vemuri, Raleigh, NC (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0175 (2006.01); G01R 19/165 (2006.01); H03K 3/356 (2006.01); H03K 5/22 (2006.01); H03K 17/10 (2006.01); H03K 19/003 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018528 (2013.01); G01R 19/16566 (2013.01); H03K 3/356113 (2013.01); H03K 5/22 (2013.01); H03K 17/102 (2013.01); H03K 19/00361 (2013.01); H03K 19/017509 (2013.01);
Abstract

Techniques are described herein to enhance capability of floating level translators. For example, increased headroom is accomplished by adaptively bypassing the protection elements of the voltage level translator. In an example, a floating level translator can translate an input signal from a low-voltage domain to a high-voltage domain. A bypass circuit is coupled across the protection elements. The bypass circuit selectively engages during low-voltage operation (e.g., thereby providing a lower loss path relative to loss caused by the high-voltage protection elements and thus increasing the headroom swing), and disengages responsive to the high-voltage reference rail of the high-voltage domain exceeding a threshold or otherwise being high enough (e.g., greater than the potential of the low-voltage domain power rail). The bypass circuit can be implemented in a relatively low-complexity manner (e.g., back-to-back high-voltage FETs) without additional signals to control low-voltage capability.


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