The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Apr. 26, 2023
Applicant:

Psemi Corporation, San Diego, CA (US);

Inventor:

Alper Genc, San Diego, CA (US);

Assignee:

pSemi Corporation, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/0812 (2006.01); H03K 17/16 (2006.01); H03K 17/693 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H03K 17/693 (2013.01); H03K 2217/0018 (2013.01);
Abstract

Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and/or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.


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