The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Jul. 17, 2023
Murata Manufacturing Co., Ltd., Kyoto, JP;
James Garrett, Windham, NH (US);
Sri Harsh Pakala, Chandler, AZ (US);
Brendan Metzner, North Billerica, MA (US);
Ivan Duzevik, Portland, ME (US);
David J. Perreault, Cambridge, MA (US);
John R. Hoversten, Arlington, MA (US);
Yevgeniy A. Tkachenko, Belmont, MA (US);
Murata Manufacturing Co., Ltd., Kyoto, JP;
Abstract
Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through 'supply modulation' (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.