The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Oct. 27, 2021
Applicant:

Renesas Electronics America Inc., Milpitas, CA (US);

Inventors:

Hussain Hasanali Ladhani, San Diego, CA (US);

Ramanujam Srinidhi Embar, Gilbert, AZ (US);

Michael Guyonnet, Velizy, FR;

Tushar Sharma, Chandler, AZ (US);

Shishir Ramasare Shukla, Karnataka, IN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0288 (2013.01); H03F 3/195 (2013.01); H03F 3/245 (2013.01); H03F 2200/318 (2013.01); H03F 2200/451 (2013.01);
Abstract

Systems and methods for amplifying a signal is described. A circuit may convert an input radio frequency (RF) signal into a first RF signal with power level matching a power capacity of a first transistor of a first size in a carrier amplifier stage, a second RF signal with power level matching a power capacity of a second transistor of the first size in a peaking amplifier stage, and a third RF signal with third power level matching a power capacity of a third transistor of a second size in another peaking amplifier stage. The circuit may amplify the first, second, and third RF signals to generate first, second, and third amplified RF signals, respectively. The circuit may combine the first, second, and third amplified RF signals, into an output RF signal that is an amplified version of the input RF signal.


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