The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Feb. 27, 2020
Infineon Technologies Canada Inc., Ottawa, CA;
Hossein Mousavian, Kanata, CA;
Larry Spaziani, Chelmsford, MA (US);
Infineon Technologies Canada Inc., Ottawa, CA;
Abstract
Pulsed laser drivers are disclosed comprising Gallium Nitride (GaN) power transistors for driving diode laser systems requiring high current and fast pulses, such as laser drivers for LIDAR (Light Detection and Ranging) systems. Drivers are capable of delivering pulses with peak current ≥100 A, e.g. 170 A to provide high peak power, fast pulses with nanosecond rise times and nanosecond pulse duration, for driving multi-channel laser diode arrays with 40 A per channel for 120 W output per channel for a combined peak output of 480 W. For lower duty cycle, example driver circuits are disclosed comprising a high current power transistor for direct drive with drive assist. For higher duty cycle, example resonant driver circuits are disclosed comprising two high current power transistors. Implementation of resonant driver circuits with GaN technology provides fast charging for short pulse operation at higher repetition rates or for pulse code modulation.