The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Aug. 14, 2020
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Lorenzo Ferrari, Portland, OR (US);

Zhaowei Liu, San Diego, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); G02B 5/00 (2006.01); G02B 5/18 (2006.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); G02B 5/008 (2013.01); G02B 5/1809 (2013.01); H01L 2933/0083 (2013.01);
Abstract

A light emitting diode may include a light emission layer and a charge transport layer disposed on the light emission layer. A grating including a plurality of nanoholes may be formed by removing a portion of the charge transport layer and/or the light emission layer and depositing a plasmonic metamaterial on a remaining portion of the charge transport layer and/or the light emission layer. The nanoholes may include the plasmonic metamaterial deposited inside the recesses formed by the remaining portion of the charge transport layer and/or the light emission layer, with an additional portion of the charge transport layer disposed on top. A pitch, diameter, and/or depth of the nanoholes may be configured to maximize the quantum efficiency of the light emitting diode, especially at a microscale of less than 100 microns.


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