The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Feb. 06, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Takashi Hamochi, Shimotsuga, JP;
Kenichi Okazaki, Tochigi, JP;
Satoru Idojiri, Tochigi, JP;
Yasutaka Nakazawa, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. A method for fabricating the semiconductor device includes a step of forming a semiconductor layer including a metal oxide; a step of forming, over the semiconductor layer, a first conductive layer and a second conductive layer that are apart from each other over the semiconductor layer; a step of performing plasma treatment using a mixed gas including an oxidizing gas and a reducing gas on a region where the semiconductor layer is exposed; a step of forming a first insulating layer over the semiconductor layer, the first conductive layer, and the second conductive layer; and a step of forming a second insulating layer over the first insulating layer. The first insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas including a gas containing silicon, an oxidizing gas, and an ammonia gas. The first insulating layer is formed successively after the plasma treatment without exposure to the air.