The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Mar. 02, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tatsuo Shimizu, Shinagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device of embodiments includes: a silicon carbide layer having a first face having an off angle equal to or more than 0° and equal to or less than 8° with respect to a {0001} face and a second face facing the first face and having a 4H-SiC crystal structure; a gate electrode extending in a first direction parallel to the first face; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10cm. Assuming that a first reference length in the first direction is 0.5 μm, a surface roughness of a surface of the silicon carbide layer in a range of the first reference length is equal to or less than 1 nm.