The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Apr. 26, 2022
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventor:

Huilong Zhu, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

Provided are a nanowire/nanosheet device with a support portion, a method of manufacturing the same, and an electronic apparatus including the nanowire/nanosheet device. According to the embodiments, the nanowire/nanosheet device may include: a substrate; a first source/drain layer and a second source/drain layer opposite to each other in a first direction on the substrate; a first nanowire/nanosheet and a second nanowire/nanosheet, wherein the first nanowire/nanosheet and the second nanowire/nanosheet are spaced apart from a surface of the substrate, the first nanowire/nanosheet and the second nanowire/nanosheet extend from the first source/drain layer to the second source/drain layer, respectively, and are arranged adjacent to each other in a direction parallel to the surface of the substrate; a first support portion connected between the first nanowire/nanosheet and the second nanowire/nanosheet; and a gate stack extending in a second direction intersecting the first direction to surround the first nanowire/nanosheet and the second nanowire/nanosheet.


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