The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Jan. 16, 2024
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Shinya Yamakawa, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/75 (2023.01); H01L 27/146 (2006.01); H04N 25/77 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14689 (2013.01); H04N 25/75 (2023.01); H01L 27/14645 (2013.01); H04N 25/77 (2023.01);
Abstract

An imaging device in which noise can be reduced, and an electronic device using this device. The imaging device includes a light receiving element, and a read circuit. A field effect transistor in the read circuit has a semiconductor layer in which a channel is formed, a gate electrode that covers the semiconductor layer, and a gate insulating film disposed between the semiconductor layer and the gate electrode. The semiconductor layer has a main surface, and a first side surface on one end side of the main surface in a gate width direction of the field effect transistor. The gate electrode has a first portion that faces the main surface via the gate insulating film, and a second portion that faces the first side surface via the gate insulating film. A crystal plane of the first side surface is a plane or a plane equivalent to the plane.


Find Patent Forward Citations

Loading…