The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Apr. 13, 2021
Applicant:
Tc Lab, Inc., Gilroy, CA (US);
Inventor:
Harry Luan, Saratoga, CA (US);
Assignee:
TC Lab, Inc., Gilroy, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); G11C 11/39 (2006.01); H01L 21/02 (2006.01); G11C 17/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0259 (2013.01); H01L 21/0257 (2013.01); H01L 29/7436 (2013.01); G11C 11/39 (2013.01); G11C 17/06 (2013.01);
Abstract
A method of making stacked lateral semiconductor devices is disclosed. The method includes depositing a stack of alternating layers of different materials. Slots or holes are cut through the layers for subsequent formation of single crystal semiconductor fences or pillars. When each of the alternating layers of one material are removed space is provided for formation of single crystal semiconductor devices between the remaining layers. The devices are doped as the single crystal silicon is formed.